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? switching regulators ? switching converters ? 30v/7a, r ds(on) =15m ? (typ.) @ v gs =10v r ds(on) =22m ? (typ.) @ v gs =5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) apm3023n handling code tem p. range package code package code v : s o t -223 operating junction tem p. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm3023n v: apm3023n xxxxx xxxxx - date code lead free code n-channel mosfet top view of sot-223 g d s g s d (3) (2) (1) note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature.
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(t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 30 v gss gate-source voltage 20 v i d * continuous drain current 7 i dm * pulsed drain current v gs =10v 28 a i s * diode continuous forward current 1.5 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 1.47 p d * power dissipation for single operation t a =100 c 0.58 w r ja * thermal resistance-junction to ambient 85 c/w note: *surface mounted on 1in 2 pad area, t 10sec. APM3023NV symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 30 v v ds =24v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 1 1.5 2 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds =7a 15 20 r ds(on) a drain-source on-state resistance v gs =5v, i ds =5a 22 28 m ? v sd a diode forward voltage i sd =1.5a, v gs =0v 0.8 1.3 v gate charge characteristics b q g total gate charge 30 39 q gs gate-source charge 5.8 q gd gate-drain charge v ds =15v, v gs =10v, i ds =7a 3.8 nc " #$ (t a = 25 c unless otherwise noted)
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&' (t a = 25 c unless otherwise noted) APM3023NV symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 2.5 ? c iss input capacitance 830 c oss output capacitance 145 c rss reverse transfer capacitance v gs =0v, v ds =25v, frequency=1.0mhz 15 pf t d(on) turn-on delay time 11 18 t r turn-on rise time 17 26 t d(off) turn-off delay time 37 54 t f turn-off fall time v dd =15v, r l =15 ? , i ds =1a, v gen =10v, r g =6 ? 20 30 ns notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
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, 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja :85 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 () #$ power dissipation p tot - power (w) t j - junction temperature ( c) drain current t j - junction temperature i d - drain current (a) thermal transient impedance normalized transient thermal resistance square wave pulse duration (sec) safe operation area v ds - drain - source voltage (v) i d - drain current (a) 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a =25 o c 0 20406080100120140160 0 1 2 3 4 5 6 7 8 t a =25 o c,v g =10v 0.01 0.1 1 10 100 0.01 0.1 1 10 50 300us 1ms t a =25 o c rds(on) limit 1s 10ms 100ms dc
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% v ds - drain - source voltage (v) i d - drain current (a) output characteristics r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) t j - junction temperature ( c) gate threshold voltage normalized threshold voltage () #$ %#
&' 0246810 0 4 8 12 16 20 24 28 3v 4v v gs =5, 6, 7, 8, 9, 10v 0 4 8 1216202428 0 5 10 15 20 25 30 35 40 v gs =10v v gs =5v 012345 0 4 8 12 16 20 24 28 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 a
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- drain-source on resistance normalized on resistance t j - junction temperature ( c) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) v ds - drain-source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) v gs - gate-source voltage (v) () #$ %#
&' -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 15m ? v gs = 10v i ds = 7a 0.0 0.4 0.8 1.2 1.6 2.0 0.3 1 10 30 t j =25 o c t j =150 o c 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 1400 frequency=1mhz crss coss ciss 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 v ds =15v i d = 7a
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d d1 e b1 e1 b 12 3 l h e c a a a sot-89 (reference eiaj ed-7500a reg stration sc-62) millimeters inches dim min. max. min. max. a 1.40 1.60 0.055 0.063 b 0.40 0.56 0.016 0.022 b1 0.35 0.48 0.014 0.019 c 0.35 0.44 0.014 0.017 d 4.40 4.60 0.173 0.181 d1 1.35 1.83 0.053 0.072 e 1.50 bsc 0.059 bsc e1 3.00 bsc 0.118 bsc e 2.29 2.60 0.090 0.102 h 3.75 4.25 0.148 0.167 l 0.80 1.20 0.031 0.047 10 10
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sot-223( reference jedec registration sot-223) b1 d h e k e e1 a c l a1 a b b millimeters inches dim min. max. min. max. a 1.50 1.80 0.06 0.07 a1 0.02 0.08 b 0.60 0.80 0.02 0.03 b1 2.90 3.10 0.11 0.12 c 0.28 0.32 0.01 0.01 d 6.30 6.70 0.25 0.26 e 3.30 3.70 0.13 0.15 e 2.3 bsc 0.09 bsc e1 4.6 bsc 0.18 bsc h 6.70 7.30 0.26 0.29 l 0.91 1.10 0.04 0.04 k 1.50 2.00 0.06 0.08 0 10 0 10 13 13
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0 t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p $) *
terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. ! +#

(ir/convection or vpr reflow) #
! + profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
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!$ test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles # ( ,!

t ao e w po p ko bo d1 d f p1 ! )( table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c #
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!! application carrier width cover tape width devices per reel sot-223 12 9.3 2500 application a b c j t1 t2 w p e 330 1 62 1.5 12.75 0.15 2 0.6 12.4 +0.2 2 0.2 12 0.3 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sot-223 5.5 0.05 1.5+ 0.1 1.5+ 0.1 4.0 0.1 2.0 0.05 6.9 0.1 7.5 0.1 2.1 0.1 0.3 0.05 #- (

# * - anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 a j b t2 t1 c (mm) # ( ,!

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